DDR4

DDR is also called SDRAM Dual Date Rate SDRSM double the rate of DDR SDRAM is a high speed CMOS dynamic random access memory USA JEDEC Solid State Technology Association in 2000 June released a double data rate synchronous dynamic random access memory ( DDR SDRAM JESD79 ) standard due to its clock trigger along the upper and lower edge can carry out data transmission so even in 133MHz the bus frequency bandwidth can reach 2.128GB / s DDR does not support 3.3V voltage LVTTL but support for 2.5V SSTL2 standard which can still continue to use the existing SDRAM production system manufacturing cost is higher than SDRAM, but far less than the price of Rambus DDR memory represents the future can compete with Rambu memory development direction.

DDR4 memory status

DDR4 memory specifications originally planned in 2011 to complete the development, which was put into production in 2012 and appear on the market, but the market research agency IHS iSuppli data, DDR4 in 2013 did not see any trace, until 2014 will appear.

But the DDR4 is expected to spread very fast, in 2014 will account for the global memory total volume is 12%, which is about 122000000; 2015 will sit skyrocketing to 56%, shipments of nearly 600000000, DDR3 increased from 85% squeeze to only 42%, rapid completion of alternation of generations.

IHS iSuppli also predicted that, in 2014 the global memory total shipments will be the first to break through 1000000000, reached 1017000000, an increase of nearly 10%, DDR4's birth will be on the memory market again stimulation.

Memory capacity, is from 2GB to 4GB transition, with the birth of DDR4, 8GB memory will gradually flourishing rise, appeared a few years later 8GB DDR4 memory will be the standard configuration.

According to the plan, DDR4 memory operating frequency will be upgraded to 2133-4266MHz, voltage to 1.2V, 1.1V, production process using 30nm level. Samsung and Hynix has created its first DDR4 memory, respectively is the server type 2133MHz / 1.2V 2GB UDIMM and notebook type 2400MHz / 1.2V 2GB ECC SO-DIMM.

Memory Summit

According to introducing the United States JEDEC will shortly start DDR4 DDR4 memory Summit

, which also marks the DDR4 standard-setting work. Generally believe that this conference is held before the new products will be in 3 years to appear on the market, and it also means that we will be in 2011 when using DDR4 memory, the fastest also may to 2010 ahead of schedule.

JEDEC said in 7 months in the United States Congress held in memory MEMCON07SanJose when considered DDR4 memory as much as possible to inherit from the DDR3 memory specification. The use of Single-endedSignaling ( traditional SE signal ) signal that 64-bit storage module technology will be inherited. It is held in the DDR4 summit, DDR4 memory not only Single-endedSignaling, Congress also introduced based on differential signal memory standard DDR4 memory.

Specifications

So DDR4 memory will have two specifications. The use of Single-endedSignaling signal DDR4 memory its transmission rate has been confirmed as the 1.6 ~ 3.2Gbps, and based on the differential signal technology DDR4 memory its transmission rate will be able to reach 6.4Gbps. Through a DRAM two interface is basically impossible, so DDR4 memory will exist at the same time based on the traditional SE signal and its differential signal of two kinds of product specifications.

According to the number of the semiconductor industry related personnel introduction, DDR4 memory will be the Single-endedSignaling ( traditional SE signal ) DifferentialSignaling ( differential signaling technology ) means to coexist. One of AMD's Mr. PhilHester said confirmed. It is expected that the two standard will promote different chip product, therefore in the DDR4 memory time we will see two mutually incompatible memory products